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| ALR325 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG(A) DESCRIPTION: The ASI ALR325 is Designed for D G 2xR H J K P 4x .062 x 45 2xB A .040 x 45 C E F FEATURES: I * Input Matching Network * * OmnigoldTM Metalization System L N M DIM A MINIMUM inches / mm MAXIMUM inches / mm .135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 .145 / 3.68 .120 / 3.05 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O B C D E F .396 / 10.06 .130 / 3.30 .407 / 10.34 18.75 A 55 V 730 W @ TC = 25 C -65 C to +250 C -65 OC to +200 OC 0.10 OC/W O O G H I J K L M N P .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 ORDER CODE: ASI10516 CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES hFE PG C IC = 50 mA IC = 50 mA IE = 15 mA VCE = 50 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 3.0 30 UNITS V V V mA --dB % VCE = 5.0 V VCC = 45 V GHz IC = 5.0 A POUT = 325 W f = 1.2 to 1.4 10 6.5 38 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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